The development of highly responsive, ultrathin, and cost-effective 0D-2D nanocomposite photodetectors, in which light absorption and carrier transportation may be realized separately and independently, has garnered considerable attention. In the present work, we demonstrate the fabrication of atomically thin UV photodetectors based on a hybrid structure (0D-2D) of semiconducting WS2 quantum dots (0D) with graphene (2D) on SiO2/Si substrate. Graphene and WS2 quantum dots (WS2-QDs) are synthesized through chemical vapor deposition (CVD) and hydrothermal processes, respectively. The proposed photodetector offers a remarkable response to ultraviolet (UV) light of ∼365 nm, owing to the high absorption efficiency of WS2-QDs and excellent charge mobility of graphene. The photodetector exhibits high responsivity of ∼1814 A W–1 under illumination of UV light (365 nm, power density of 50.74 μW cm–2) and a high photodetectivity of ∼7.47 × 1012 Jones (cm Hz1/2 W–1). The photodetector fabricated in this work shows a fast photoresponse time of ∼2 s (rise time) and ∼2.9 s (fall time). We have also elucidated the working principle of the proposed photodetector. Outcomes of the present work are comparable or better than other results available in the literature. Our findings suggest that this nanocomposite structure of WS2-QDs with graphene sheets is a prospective candidate for high-performance optoelectronic devices.

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This paper reports the fabrication of a high-performance and broadband photodetector based on the Cu2SnS3 (CTS) quantum dots (QDs)/ZnO hybrid structure on ITO glass. The enhanced performance and a broad-spectrum photodetector have been achieved for this hybrid structure compared with any single-material-based device. The visible–near-infrared (NIR)-sensitive capabilities of CTS QDs have been combined with UV-sensitive ZnO thin films for broadband operation. The heterostructure device has been fabricated by simple drop-casting of CTS QDs on low-cost spin-coated ZnO thin films on the ITO substrate. The fabricated device possesses good photoresponse properties (sensitivity, responsivity) from the visible to NIR spectrum. The resultant responsivity of the CTS QDs/ZnO/ITO photodetector measured under UV (@360 nm), visible (@720 nm), and NIR (@1050 nm) illuminations has been found to be ∼2.8, ∼0.2, and ∼0.4 (A/W), respectively, at 2.5 V. The designed hybrid device may provide a competitive wideband photodetector having merits of low cost and a simple fabrication structure.