Graphene quantum dots (GQDs) synthesized by a direct chemical method have been used in combination with ZnO nanowires (NWs) to demonstrate their potential as a solar harvesting material in photovoltaic cells exhibiting an open circuit voltage of 0.8 V. The excited state interaction between the photoexcited GQDs and the ZnO NWs has been verified from the charge-transfer process by both emission spectroscopy and photovoltaic measurements. This work has implications for less expensive and efficient next generation solid-state solar cells.

On the face of the impending energy crisis, developing low-energy or even zero-energy photoelectronic devices is extremely important. A multispectral photosensitivity feature of a self-powered device provides an additional powerful tool. We have developed an unprecedented high performance dual wavelength self-powered ZnO@CdS/PEDOT:PSS core-shell nanorods array photodetector through a simple aqueous chemical method wherein a suitable band alignment between an intelligent material pair, i.e. ZnO and CdS, has been utilized. Besides a noteworthy advantage of the devices being that they show a very sharp and prominent dual wavelength photosensitivity, both the ultraviolet and visible light sensitivity (ratio of current under illumination (Iphoto)/current under dark (Idark)) of the device are two orders of higher magnitude than those of pristine ZnO, attaining values of 2.8 × 10(3) and 1.07 × 10(3), respectively. At the same time, temporal responses faster than 20 ms could be achieved with these solution-processed photodetectors. The present study provides a very important direction to engineer core-shell nanostructured devices for dual wavelength high photosensitivity.

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Understanding the mechanism behind high photocurrent gain is very important to realize a highly functional material for photodetector devices. Herein, we report a very high ultraviolet photocurrent gain of 2.8 × 105 in hydrothermally grown Cu-doped ZnO nanorod arrays which is two orders of magnitude higher as compared to the undoped sample. Trapping of carriers under dark and de-trapping them under illumination by Cu-related defects is responsible for high gain. The trap state at ∼1.65 eV is attributed to the [{CuZn+(3d10)}− − Zni+(4s1)]0 type of defects. A model is shown to explain the dark and photocurrent states in the doped samples.

The well-ordered metal oxide nanostructures can be synthesized successfully, but the conductance of these structures is limited, which is a disadvantage for applying these in photovoltaic and display devices. Conductivity of a semiconductor can be improved by using metal doping, but the issue becomes a major challenge in nanostructures since their high surface energy usually hinders any metal doping process. Here we show an entirely new metal-free doping strategy to enhance the current conduction of ZnO nanorods' (NRs) arrays through a sulphidation technique. The process is based on the electronegativity difference between S and O because of which one can expect a rigorous bond rearrangement at the interface and a ZnOS-ZnS composite is formed as O is being partially replaced by S. The current conduction by the metal oxide NRs arrays is significantly enhanced by nearly 4 orders of magnitude without sacrificing the transparency of the NRs arrays. The increased current conduction is assigned due to an increase in the Zn(i) concentration as evidenced from the electron paramagnetic resonance measurements. The composite layer grown on p-Si forms a photodiode which is highly sensitive to visible light with a very fast response time.