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Indium nitride (InN) nanoparticles (NPs) are a potentially important material for optoelectronic and high speed electronic devices. Using 1064 nm Nd:YAG laser, InN NPs suspension has been prepared by laser ablation of indium target submerged under ammonium hydroxide. FTIR determined the presence of In=N at 1114.8 cm[Formula: see text] symmetric stretching mode, and In–N bending vibration mode appears at 445.5 cm[Formula: see text]. X-ray diffraction (XRD) observed the peaks (101), (110), and (220) as a reflection formation cubic InN, with an average size of 2 nm. Scanning electron microscope (SEM) image shows that the NPs have a spherical shape with particle size in the range 2–20 nm. The transmission spectra of InN NPs suspension have the maximum optical transmission edge at 1378 nm with the band gap energy of 1.2 eV. The current–voltage characteristics of InN/Si heterojunction have a good rectifying property with a spectral responsivity of about 0.797 A/W at 750 nm wavelength.

Indium nitride InN nanoparticles NPs suspension prepared by Nd:YAG laser ablation of indium target submerged under ammonium hydroxide. The Scanning electron microscopy, X-ray diffraction, Fourier transform infrared spectroscopy, UV/VIS/NIR spectrophotometer and Conductivity meter were used to determine the properties of the nanoparticles prepared with different laser conditions. Fourier transform infrared spectra exhibit the presence of In[Formula: see text]N and In–N bonds, which indicates the formation of InN particles. X-ray diffraction pattern observed in the formation of InN NPs with cubic phase, the average diameters of the dominant peak c-InN (101) were approximately 2[Formula: see text]nm. Scanning electron microscopy image shows the presence of a large number of spherical shape nanoparticles having a particle size in the range 2–40[Formula: see text]nm with a few individual nanoparticles larger than 128[Formula: see text]nm. The transmission spectra of InN NPs suspension have the maximum optical transmission edge at 1378[Formula: see text]nm with bandgap energy was 0.85–1.2[Formula: see text]eV. InN has high electrical conductivity that depends on temperature value with small activation energy at room temperature ranging from 0.0318[Formula: see text]meV to 0.1591[Formula: see text]meV.

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