Organic-inorganic heterostructures (OIHs) are an emerging topic that has attracted great research enthusiasm due to their unique features for electronic and optoelectronic applications. Although OIHs constructed with topological insulators and...

Due to the wide spectral absorption and ultrafast electron dynamical response under optical excitation, topological insulator (TI) was proposed to have appealing application in next-generation photonic and optoelectronic devices. Whereas, the bandgap-free speciality of Dirac surface states usually leads to a quick relaxation of photoexcited carriers, making the transient excitons difficult to manipulate in isolated TIs. Growth of TI Bi2Te3/Ge heterostructures can promote the specific lifetime and quantity of long-lived excitons, offering the possibility of designing original near-infrared optoelectronic devices, however, the construction of TI Bi2Te3/Ge heterostructures has yet to be investigated. Herein, the high-quality Bi2Te3/Ge heterojunction with clear interface was prepared by PVD strategy. A significant photoluminescence quenching behaviour was observed by experiments, which was attributed to the spontaneous excitation transfer of electrons at heterointerface via theoretical analysis. Then, a self-powered heterostructure photodetector was fabricated, which demonstrated a maximal detectivity of 1.3×1011 Jones, an optical responsivity of 0.97AW-1, and ultrafast photoresponse speed (12.1 μs) under 1064 nm light illumination. This study offers a fundamental understanding of the spontaneous interfacial exciton transfer of TI-based heterostructures, and the as-fabricated photodetectors with excellent performance provided an important step to meet the increasing demand for novel optoelectronic applications in the future.

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