ESD and EMI are important issue in HDD. Ball bond machine makes a micro electrical connection; and this involves high voltage and high frequency current. Other works had only investigated ESD effect. This work newly presents the investigation of the severity of both ESD and EMI on MR heads. Discharge current was captured by a current transducer. EMI effect was monitored using finite integral. The experiments show discharge current was as high as few A. EMI simulations illustrate interference on a current transducer. The benefit of this work leads to higher accuracy in measurement at high frequency range.

The sensitivity to electrostatic discharge (ESD) events of the phase change memory was investigated by using a three-dimensional finite element modeling based on electro thermal physics. Analytical storage elements were tested on � trench structure during three ESD models stress, HBM model, MM model, and CDM model. It was found that the phase-change memory cell is failure when All ESD model voltage stress lower than 5V. The phase change memory cell must then be considered as very sensitive class-O devices for HBM model, class-Ml for MM model and class-Cl for CDM model.

Electromagnetic interference (EMI) can degrade device performance, particularly a sensitive device such as magnetic recording heads. A high applied voltage generates a high electric field in order to break the electrical air gap during a gold ball bonding process. This work, for the first time, investigates the influence of high voltage pattern of a gold ball bond machine on both electric field and magnetic field as an electromagnetic wave by monitoring an intensity of electromagnetic interference. The investigation was carried out by simulation of a live gold ball bond machine operation by using a finite integral technique. The simulation results reveal that the voltage pattern plays an important role in the intensity of electromagnetic radiation (EMR). In conclusion, an ideal voltage pulse of 2 kV and 4 kV generates the highest EMR detected by a monopole antenna. The induced voltage occuring at the antenna reflecting the intensity of EMI blasting was as high as 33.39 V and 71.36 V, respectively. Smoothening the voltage pattern by incrasing the rise time of voltage to 100 ns only, the induced voltage at the antenna was reduced down to 99.90% and 99.92% compairing with the case of an ideal voltage pulse for the peak EFO voltage of 2 kV and 4kV respectively. This concludes the importance of the voltage pattern during a free air ball forming process; hence lowering the risk of the highly sensitive deivce to be damaged by EMI blasting.