Optical, scintillation, and dosimeter properties of AlN ceramic were reported. AlN sample was SHAPAL, a commercial product of Tokuyama Corp. for mainly a heat sink application. From ultra violet to near infrared wavelengths, it showed 0.021% transmittance with visibly translucent appearance. In photoluminescence (PL), it exhibited mainly two emission bands around 340 and 550 nm with primary decay times of 0.92 and 0.24 ns, respectively. X-ray induced radioluminescence spectrum was investigated and 340 nm peak showed high emission intensity. As a dosimeter property, thermally stimulated luminescence (TSL) was studied and glow peaks appeared at 80 and 320°C. The linearity between the irradiated dose and TSL intensity was studied and AlN ceramic exhibited a good linear response from 0.002 to 0.1 Gy.

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We report the distinct scintillation properties of the well-known Ga2O3 semiconductor material. Under UV excitation, the photoluminescence (PL) emission peak appeared near a wavelength of 380 nm with a quantum yield of 6%, and fast decays of 8 and 793 ns were observed. In contrast, the X-ray-induced scintillation spectrum showed an intense emission band near a wavelength of 380 nm, whose decay curve was reproduced using two exponential decay components with time constants of 8 and 977 ns. The pulse height spectrum of 137Cs γ-rays measured using Ga2O3 showed a clear photoabsorption peak with a light yield of 15000 ± 1500 photons/MeV.

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