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The epitaxial wafer is expected to become the industry standard for super large‐diameter wafers over 300 mm. The demand for reductions in production cost along with stringent quality improvements are driving diameters upward. The super silicon project has developed an epitaxial process, for 400 mm epitaxial wafers, using SiH4 gas at a low temperature just under 1000°C. This process promises to decrease contamination, to prevent slip generation, and to improve productivity. Since the epitaxial layer quality is tightly correlated with the growth process, we also characterized the microdefects and microroughness on the surface of epitaxial wafers that were grown with the SiH4 process. Comparing the results of this experiment with those of a conventional SiHCl3 process, we conclude that the SiH4 process presents no problems when applied to super large‐diameter epitaxial wafer production. © 2000 The Electrochemical Society. All rights reserved.

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The epitaxial wafer is expected to become the main substrate of semiconductor devices for super large diameter wafers over 300 mm. We are developing the 400 mm epitaxial wafer under the super silicon project. Our first technical accomplishment was the development of a low temperature SiH 4 gas epitaxial growth process, followed by the manufacture of a single wafer spin cleaner and original epitaxial furnace for 400 mm diam wafers. We were successful in growing the entire surface of a 400 mm diam wafer by a series of processes that were conducted using these developments.