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Undoped and In-doped ZnO films on glass substrate were successfully grown by spray pyrolysis at 500 C. The samples were annealed under N 2 atmosphere between 100 and 600 C for 5 min. The lattice constants and grain sizes of both samples were unchanged with increasing annealing temperature. However, the photoluminescence intensity of the In-doped sample markedly decreased in comparison with that of the undoped sample with increasing annealing temperature. The carrier concentration increased with increasing annealing temperature. These findings indicated that the number of nonradiative recombination centers of the In-doped ZnO samples markedly increased.