No abstract

In this paper, a novel concept of dynamic reconfiguration of field-effect transistor (FET) having capability to switch between tunnel FET (TFET) and metal-oxide-semiconductor FET (MOSFET) is proposed. The proposed device yields the advantages of both devices (low power TFET and high performance MOSFET). To embrace best features into a single device, chargeplasma (CP) and electro-static polarity techniques were employed. The proposed device comprises of ultrathin intrinsic (dopingless) silicon nanowire, where source and drain regions are formed by CP and polarity-gate (PG). The dopingless and junctionless concepts provide advantage of process variation immunity mainly arises from random dopant fluctuation (RDFs) and lower thermal budget (thermal annealing and ion implantation process) that minimizes the fabrication cost.