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Chip-level optical interconnects is an alternative technology that offers the ability to potentially overcome the interconnect bottleneck projected to occur in high-end computing and telecommunication systems. In this context, we are investigating a fused 3-D micro-optical architecture that enables through-wafer vertical optical interconnects. Based on this architecture a prototype 3-D micro-optical interconnection system is fabricated that is scaleable and can be easily modified to implement various optical interconnect configurations. This prototype consists of an integrated optoelectronic transmitter and receiver multichip module. A diffractive optical element is used for optically interconnecting the multichip modules and in establishing a point-to-point link. The link length, as measured from the optical source of the transmitter to the detector plane of the receiver is 2.332 mm. The transmitter and receiver module dimensions as well as the integrated system volume are a meager 2.9x3.3 mm 2 , 2.1x2.7 mm 2 , and 15.27mm 3 , respectively, and preserve the VLSI-scale. The design, fabrication, integration of this system, and experimental results are presented.

Using conventional microfabrication techniques, we have developed a new, low-cost wafer bumping process that enables a high degree of control over patterning of conductive adhesive interconnects. This approach obviates the need for development of dispensing and scraping head equipment that may otherwise be required for mass fabrication of lithographically patterned adhesive bumps. Flip-chip interconnects formed using this new process offer better electrical performance as compared to those formed by squeegee-based definition techniques. This is inferred in this paper by experimentally demonstrating lower contact resistance with the polished bumps as compared to the squeegeed bumps. Furthermore, in order to study the high-speed electrical performance characteristics of these conductive adhesive bumps, a 10-GHz 1.55-m p-i-n photodetector fabricated in the antimonide material system was used as case study. The results from the bandwidth characterization of the polymer flip-chip-integrated detector showed minimum degradation in the high-speed performance characteristics of the detector.

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