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We studied characteristic temperatures (T0) of laser diodes (LDs) grown on semipolar GaN substrates and emitting in the green spectral range. For several semipolar laser designs with and without an electron blocking layer (EBL), T0 remains higher (161–246 K) than that typically reported for c-plane green LDs. The slope efficiency measured in the pulsed regime is nearly temperature independent. These observations indicate that T0 is mainly determined by intrinsic quantum well (QW) properties, such as higher differential gain. A high T0 and a sufficient injection efficiency allow the achievement of a continuous wave output power of 60 mW for an LD without an EBL.

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