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We demonstrate for the first time the applicability of antenna-coupled field-effect transistors for the detection of terahertz radiation (TeraFETs) for multi-spectral imaging from 0.76 to 4.25 THz. TeraFETs were fabricated in a commercial 90-nm CMOS process and noise-equivalent powers of 59, 20, 63, 85 and 110 pW/√(Hz) at 0.216, 0.59, 2,52, 3.11 and 4.25 THz, respectively, have been achieved. A set of TeraFETs has been applied in raster-scan transmission and reflection imaging of pellets of sucrose and tartaric acid simulating common plastic explosives. Transmittance values are in good agreement with Fourier-transform infrared spectroscopy data. The spatial distribution of the components in the samples has been determined from the transmission data using principal component analysis.

Room-temperature detection and imaging in transmission and reflection geometries at 0.591 THz with planar asymmetrically shaped InGaAs diodes (also called bow-tie diodes) are demonstrated in direct and heterodyne mode. The sensitivity of the diodes is found to be 6 V/W in direct mode, and the noise-equivalent power (NEP) in direct and heterodyne mode is estimated to be about 4nW / (Wurzel aus Hz) and 230 fW/Hz for a local-oscillator power of 11 µW, respectively. The improvement of the dynamic range by heterodyning over direct power detection amounts to about 20 dB using pixel read-out times relevant to real-time imaging conditions