We present the design, fabrication and characterisation of a broadband leaky lens antenna for broadband, spectroscopic imaging applications. The antenna is designed for operation in the 300-900 GHz band. We integrate the antenna directly into an Al-NbTiN hybrid MKID to measure the beam pattern and absolute coupling efficiency at three frequency bands centred around 350, 650 and 850 GHz, covering the full antenna band. We find an aperture efficiency ηap ≈ 0.4 over the whole frequency band, limited by lens reflections. We find a good match with simulations for both the patterns and efficiency, demonstrating a 1:3 bandwidth in the sub-mm wavelength range for future on-chip spectrometers.
We present a lab-on-chip experiment to accurately measure losses of superconducting microstrip lines at microwave and submillimeter wavelengths. The microstrips are fabricated from Nb-Ti-N, which is deposited using reactive magnetron sputtering, and amorphous silicon which is deposited using plasmaenhanced chemical vapor deposition (PECVD). Submillimeter wave losses are measured using on-chip Fabry-Perot resonators (FPRs) operating around 350 GHz. Microwave losses are measured using shunted half-wave resonators with an identical geometry and fabricated on the same chip. We measure a loss tangent of the amorphous silicon at single-photon energies of tan δ = 3.7 ± 0.5 × 10 −5 at approximately 6 GHz and tan δ = 2.1 ± 0.1 × 10 −4 at 350 GHz. These results represent very low losses for deposited dielectrics, but the submillimeter wave losses are significantly higher than the microwave losses, which cannot be understood using the standard two-level system loss model.
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