The formation of unknown polymorphs due to the crystallization at a substrate surface is frequently observed. This phenomenon is much less studied for epitaxially grown molecular crystals since the unambiguous proof of a new polymorph is a challenging task. The existence of multiple epitaxial alignments of the crystallites together with the simultaneous presence of different polymorphs does not allow simple phase identification. We present grazing incidence X-ray diffraction studies on conjugated molecules like perylenetetracarboxylic dianhydride (PTCDA), pentacene, dibenzopentacene (trans-DBPen), and dicyanovinylquater-thiophene (DCV4T-Et2) grown by physical vapor deposition on single crystalline surfaces like Ag(111), Cu(111), and graphene. A new method for indexing the observed Bragg peaks allows the determination of the crystallographic unit cells so that the type of crystallographic phase can be clearly identified. This approach even works when several polymorphs are simultaneously present within a single sample as shown for DCV4T-Et2 on Ag(111). Additionally, epitaxial relationships between the epitaxially grown crystallites and the single crystalline surfaces are determined. In a subsequent step, the experimental data are used for the crystal structure solution of an unknown polymorph, as shown for the example trans-DBPen grown on Cu(111).

Thin films of the organic semiconductor Ph-BTBT-10 and blends of this material with polystyrene have been deposited by a solution shearing technique at low (1 mm/s) and high (10 mm/s)...

The molecule 2-decyl-7-phenyl-[1]benzothieno[3,2- b ][1]benzothiophene is an organic semiconductor, with outstanding properties in terms of molecular packing and its use in organic electronics. The asymmetric shape of the molecule causes a double layer crystal structure at room temperature. In this work we report its thin film growth by physical vapor deposition starting from the monolayer regime up to thick films. The films are studied in terms of their morphology, crystallographic properties, and thermal stability by atomic force microscopy and X-ray diffraction methods. It is found that the bulk molecular packing of the bilayer is formed at the initial thin film growth stage. After a thickness of one double layer, a transition into a new polymorph is observed which is of metastable character. The new phase represents a single layer phase; the crystal structure could be solved by a combination of X-ray diffraction and molecular dynamics simulations. The observed thin film growth is outstanding in terms of surface crystallization: the formation of a metastable phase is not associated with the initial thin film growth, since the first growth stage represents rather the bulk crystal structure of this molecule. Its formation is associated with cross-nucleation of one polymorph by another, which explains why a metastable phase can be formed on top of a thermodynamically more stable phase.

The molecule 2-decyl-7-phenyl [1]benzothieno [3,2-b][1]benzothiophene has gained a lot of attention since high charge carrier mobility was observed in thin film transistors. Its thermotropic liquid crystalline states may play an important role in the thin film formation since the smectic A and the crystal smectic E phase (SmE) are claimed to be pre-stages of the final bulk structure. To understand the phase diversity, structural characterisation of solution processed thin films is performed by X-ray diffraction in the complete temperature range up to the isotropic state at 240°C. The diffraction pattern of the SmE phase is analysed in detail. Peak broadening analysis reveals that the crystallographic order across the smectic layers is larger than the order along the smectic layers. A combined experimental and computational approach is used to determine the molecular packing within the SmE phase. It leads to a number of different packing motifs. A comparison of the calculated diffraction pattern with the experimental results reveals that nano-segregation is present within the SmE phase. Energy consideration clearly favours a herringbone arrangement of the aromatic units. The nano-segregation within the SmE phase with herringbone packing of the aromatic units is accompanied with interdigitation of side chains from neighbouringherringbone layers.

The molecule 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10) is an organic semiconductor with outstanding performance in thin-film transistors. The asymmetric shape of the molecule causes an unusual phase behavior, which is a result of a distinct difference in the molecular arrangement between the head-to-head stacking of the molecules versus head-to-tail stacking. Thin films are prepared at elevated temperatures by crystallization from melt under controlled cooling rates, thermal-gradient crystallization, and bar coating at elevated temperatures. The films are investigated using X-ray diffraction techniques. Unusual peak-broadening effects are found, which cannot be explained using standard models. The modeling of the diffraction patterns with a statistic variation of the molecules reveal that a specific type of molecular disorder is responsible for the observed peak-broadening phenomena: the known head-to-head stacking within the crystalline phase is disturbed by the statistic integration of reversed (or flipped) molecules. It is found that 7–15% of the molecules are integrated in a reversed way, and these fractions are correlated with cooling rates during the sample preparation procedure. Temperature-dependent in situ experiments reveal that the defects can be healed by approaching the transition from the crystalline state to the smectic E state at a temperature of 145 °C. This work identifies and quantifies a specific crystalline defect type within thin films of an asymmetric rodlike conjugated molecule, which is caused by the crystallization kinetics.