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We study amorphous Ge quantum dots embedded in a crystalline Si matrix through structure modeling and simulation using ab initio density functional theory including spin-orbit interaction and quasiparticle effects. Three models are generated by replacing a spherical region within diamond Si by Ge atoms and creating a disordered bond network with appropriate density inside the Ge quantum dot. After total-energy optimisations of the atomic geometry we compute the electronic and optical properties. We find three major effects: (i) the resulting nanostructures adopt a type-I heterostructure character; (ii) the lowest optical transitions occur only within the Ge quantum dots, and do not involve or cross the Ge-Si interface. (iii) for larger amorphous Ge quantum dots, with diameters of about 2.0 and 2.7 nm, absorption peaks appear in the mid-infrared spectral region. These are promising candidates for intense luminescence at photon energies below the gap energy of bulk Ge.

We investigate the optical properties of hydrogenated α-Sn nanocrystals up to diameters of 3.6 nm in the framework of an ab initio pseudopotential method including spin-orbit interaction (SOI) and the repeated supercell approximation. The fundamental absorption and emission edges are determined including quasiparticle effects and electron-hole interaction. The atomic geometries in the ground and excited electronic states follow from total energy optimization. We discuss the oscillator strengths of the optical absorption near the fundamental gaps for the most important transitions. We demonstrate that the spectra can only be correctly described including SOI. The strongly size-dependent Stokes shifts between optical absorption and emission are shown to be mainly a consequence of the different atomic geometries.