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The paramagnetic radicals formed in the TL phosphors BaSO4:Eu and BaSO4:Eu, P have been studied using the technique of ESR. Two radicals assigned to SO2-, were observed at room temperature. One of them exhibits a hyperfine interaction with a nearby cation. Step annealing measurements suggest a connection between these radicals and the TL glow peaks at 170 and 215 degrees C. Co-doping BaSO4:Eu with phosphorus enhanced its TL efficiency. ESR and fluorescence emission measurements indicate that the enhancement results from an increased intake of divalent europium into the lattice.

Among the common TLD materials studied (Mg2SiO4:Tb, Al2O3:Si, Ti, CaSO4:Tm, CaSO4:Dy, Li2B4O7:Mn and LiF TLD-100), Mg2SiO4:Tb was found to have the highest intrinsic TL sensitivity to UV radiation (wavelength 253.7 nm). The TL response of the dosimetric peak (approximately 200 degrees C) of virgin Mg2SiO4:Tb was studied as a function of UV exposure in the range 10--10(4) J m-2. The UV-induced TL was not affected by room-light and no appreciable fading was observed up to 20 days after irradiation indicating that this is a promising TL phosphor for UV dosimetry. The UV sensitivity was found to increase with increasing preliminary gamma exposure above 10(-2)Ckg-1 (after a post-irradiation anneal at 300 degrees C for 1 h). The degree of sensitisation was found proportional to the intensity of the residual TL peak at 450 degrees C. A study of the TL response of the sensitised sample as a function of UV test exposure has demonstrated the transfer of charge carriers from the deep traps to the dosimetry traps. Both virgin and gamma-exposed Mg2SiO4:Tb were found to exhigit phosphorescence decay at room temperature after UV stimulation. The intensity of the UV stimulated phosphorescence was found to increase with the gamma exposure above 10(-2) C kg-1.

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