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We present a novel separation device for the front-end of a biodetection system to discriminate between biological and non-biological analytes captured in air samples. By combining AC dielectrophoresis along the flow streamlines and a field-induced phase-separation, the device utilizes “dielectrophoretic gating”to separate analytes suspended in a flowing fluid based on their intrinsic polarizability properties. The gates are integrated into batch fabricated self-sealed surface-micromachined fluid channels. We demonstrate that setting the gate to a moderate voltage in the radio frequency range removed bacteria cells from a mixture containing non-biological particles without the need for fluorescent labeling or antibody-antigen hybridization, and also validate experimentally basic relations for estimating the gate performance.

We describe a batch fabrication process for producing encapsulated monolithic microfluidic structures. The process relies on sacrificial layers of silicon oxide to produce surface micromachined fluid channels. Bulk micromachined interconnects provide an interface between the microchannels and meso-scale fluidics. The full integration of the fabrication processing significantly increases device reproducibility and reduces long-term costs. The design and fabrication of dielectrophoresis (DEP) gating structures configured in both batch-flow and continuous-flow modes are detailed. Highly efficient microparticle preconcentration (up to ∼100× in 100 s) and valving (97% particle routing efficiency) are demonstrated using ac DEP and an accompanying phase separation. The low aspect-ratio fluid channels with integrated microelectrodes are well suited for µm and sub-µm particle manipulation with electric fields.

Two major problems associated with Si-based MEMS (MicroE1ectroMechanical Systems) devices are stiction and wear. Surface modifications are needed to reduce both adhesion and friction in rnicromechanical structures to solve these problems. In this paper, we will present a CVD (Chemical Vapor Deposition) process that selectively coats MEMS devices with tungsten and significantly enhances device durability. Tungsten CVD is used in the integrated-circuit industry, which makes this approach manufacturable. This selective deposition process results in a very conformal coating and can potentially address both stiction and wear problems confronting MEMS processing. The selective deposition of tungsten is accomplished through the silicon reduction of WFc. The self-limiting nature of the process ensures consistent process control. The tungsten is deposited after the removal of the sacrificial oxides to minimize stress and process integration problems. The tungsten coating adheres well and is hard and conducting, which enhances performance for numerous devices. Furthermore, since the deposited tungsten infiltrates under adhered silicon parts and the volume of W deposited is less than the amount of Si consumed, it appears to be possible to release adhered parts that are contacted over small areas such as dimples. The wear resistance of tungsten coated parts has been shown to be significantly improved by rnicroengine test structures.

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