The porous silicon (PSi) has been successfully formed on the surface of p-type Si (100) using the electrochemical anodization method in which Si was as an anode and Pt was as a cathode etched in the HF ethanoic solution for 12 min. The current densities applied during the anodization process varied from 60 mA/cm2, 70 mA/cm2, 80 mA/cm2, and 90 mA/cm2 to observe its effects on the morphological and optical properties of PSi. The morphology of PSi was tested via AFM instrument while its reflectance was measured using UV-Vis Spectrometry. The AFM images of the surface PSi reveals the pores’ depth, the pores’ size, and the surface roughness of the PSi. The results demonstrate that the increase in the current densities results in the deeper pores’ depth and the bigger pores’ size so that lifts the surface roughness values as well. On the other hand, the increase in the current densities tends to decrease the reflectance intensities of the PSi.

Porous silicon (PSi) has been formed on p-type Si (111) substrates using electrochemical anodization method. Silicon surfaces were anodized in HF (40%) dan ethanol (96%) solution with a ratio of 1:1. Anodization time was varied at 6, 8, 10 and 12 min with current density was maintained constant at 80 mA/cm2. Platinum foil was as a cathode while silicon was as an anode with a distance of 5 cm. The optical reflectance of the sample was determined using UV-Vis Spectrophotometer and surface morphology was observed using AFM. AFM’s images could determine the depth, width and roughness of PSi. The reflectance of PSi on Si (111) decreased with increasing the etching time. It indicated that many photons were trapped inside the porous. AFM images confirmed that the depth, the width, and the roughness of PSi increased with the increasing of the etching time. It is considered that the etching direction worked in the vertical and horizontal ways.

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