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P-doped ZnTe thin films were grown by molecular beam epitaxy on ZnTe (100) substrates using InP as a phosphorus supply under various different InP flux. Secondary ion mass spectroscopy (SIMS) analyses showed that P concentration in ZnTe thin films increases with increasing the InP flux although In atoms were also incorporated in the films. To suppress In incorporation, the outlet of the InP cell was modified by mounting a dome-shaped cap and a disk-shaped plate with small holes. As a result, P concentration decreases almost one order of magnitude as compared to the films grown without the cap but the significant reduction of In incorporation was confirmed by the SIMS and photoluminescence spectrum. A P-related acceptor bound exciton (Ia) peak was observed in the P-doped ZnTe thin film grown with the cap and the intensity of Ia emission increases after the annealing, indicating the activation of P acceptor.

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