The utilization of black phosphorus and its monolayer (phosphorene) and few-layers in field-effect transistors has attracted a lot of attention to this elemental two-dimensional material. Various studies on optimization of black phosphorus field-effect transistors, PN junctions, photodetectors, and other applications have been demonstrated. Although chemical sensing based on black phosphorus devices was theoretically predicted, there is still no experimental verification of such an important study of this material. In this article, we report on chemical sensing of nitrogen dioxide (NO2) using field-effect transistors based on multilayer black phosphorus. Black phosphorus sensors exhibited increased conduction upon NO2 exposure and excellent sensitivity for detection of NO2 down to 5 ppb. Moreover, when the multilayer black phosphorus field-effect transistor was exposed to NO2 concentrations of 5, 10, 20, and 40 ppb, its relative conduction change followed the Langmuir isotherm for molecules adsorbed on a surface. Additionally, on the basis of an exponential conductance change, the rate constants for adsorption and desorption of NO2 on black phosphorus were extracted for different NO2 concentrations, and they were in the range of 130-840 s. These results shed light on important electronic and sensing characteristics of black phosphorus, which can be utilized in future studies and applications.

Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (Voc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher Voc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics.

Multijunction solar cells provide us a viable approach to achieve efficiencies higher than the Shockley-Queisser limit. Due to their unique optical, electrical, and crystallographic features, semiconductor nanowires are good candidates to achieve monolithic integration of solar cell materials that are not lattice-matched. Here, we report the first realization of nanowire-on-Si tandem cells with the observation of voltage addition of the GaAs nanowire top cell and the Si bottom cell with an open circuit voltage of 0.956 V and an efficiency of 11.4%. Our simulation showed that the current-matching condition plays an important role in the overall efficiency. Furthermore, we characterized GaAs nanowire arrays grown on lattice-mismatched Si substrates and estimated the carrier density using photoluminescence. A low-resistance connecting junction was obtained using n(+)-GaAs/p(+)-Si heterojunction. Finally, we demonstrated tandem solar cells based on top GaAs nanowire array solar cells grown on bottom planar Si solar cells. The reported nanowire-on-Si tandem cell opens up great opportunities for high-efficiency, low-cost multijunction solar cells.

We demonstrate a scalable and facile lithography-free method for fabricating highly uniform and sensitive InO nanoribbon biosensor arrays. Fabrication with shadow masks as the patterning method instead of conventional lithography provides low-cost, time-efficient, and high-throughput InO nanoribbon biosensors without photoresist contamination. Combined with electronic enzyme-linked immunosorbent assay for signal amplification, the InO nanoribbon biosensor arrays are optimized for early, quick, and quantitative detection of cardiac biomarkers in diagnosis of acute myocardial infarction (AMI). Cardiac troponin I (cTnI), creatine kinase MB (CK-MB), and B-type natriuretic peptide (BNP) are commonly associated with heart attack and heart failure and have been selected as the target biomarkers here. Our approach can detect label-free biomarkers for concentrations down to 1 pg/mL (cTnI), 0.1 ng/mL (CK-MB), and 10 pg/mL (BNP), all of which are much lower than clinically relevant cutoff concentrations. The sample collection to result time is only 45 min, and we have further demonstrated the reusability of the sensors. With the demonstrated sensitivity, quick turnaround time, and reusability, the InO nanoribbon biosensors have shown great potential toward clinical tests for early and quick diagnosis of AMI.

Single-walled carbon nanotubes (SWNTs) are extremely promising materials for building next-generation electronics due to their unique physical and electronic properties. In this article, we will review the research efforts and achievements of SWNTs in three electronic fields, namely analog radio-frequency electronics, digital electronics, and macroelectronics. In each SWNT-based electronic field, we will present the major challenges, the evolutions of the methods to overcome these challenges, and the state-of-the-art of the achievements. At last, we will discuss future directions which could lead to the broad applications of SWNTs. We hope this review could inspire more research on SWNT-based electronics, and accelerate the applications of SWNTs.