The present work theoretically analyzes the performance of the near-field thermophotovoltaic (TPV) energy conversion device for low temperature applications (Tsource ∼ 500 K). In the proposed TPV system, doped Si is employed as the source because its optical property can be readily tuned by changing the doping concentration, and InSb is selected as a TPV cell because of its low bandgap energy (0.17 eV). In order to enhance the near-field thermal radiation between the source and the TPV cell, monolayer of graphene is coated on the cell side so that surface plasmon can play a critical role in heat transfer. It is found that monolayer of graphene can significantly enhance the power throughput by 30 times and the conversion efficiency by 6.1 times compared to the case without graphene layer. The resulting maximum conversion efficiency is 19.4% at 10-nm vacuum gap width.

Artificially designed hyperbolic metamaterial (HMM) possesses extraordinary electromagnetic features different from those of naturally existing materials. In particular, the dispersion relation of waves existing inside the HMM is hyperbolic rather than elliptical; thus, waves that are evanescent in isotropic media become propagating in the HMM. This characteristic of HMMs opens a novel way to spectrally control the near-field thermal radiation in which evanescent waves in the vacuum gap play a critical role. In this paper, we theoretically investigate the performance of a near-field thermophotovoltaic (TPV) energy conversion system in which a W/SiO₂-multilayer-based HMM serves as the emitter at 1000 K and InAs works as the TPV cell at 300 K. By carefully designing the thickness of constituent materials of the HMM emitter, the electric power of the near-field TPV devices can be increased by about 6 times at 100-nm vacuum gap as compared to the case of the plain W emitter. Alternatively, in regards to the electric power generation, HMM emitter at experimentally achievable 100-nm vacuum gap performs equivalently to the plain W emitter at 18-nm vacuum gap. We show that the enhancement mechanism of the HMM emitter is due to the coupled surface plasmon modes at multiple metal-dielectric interfaces inside the HMM emitter. With the minority carrier transport model, the optimal p-n junction depth of the TPV cell has also been determined at various vacuum gaps.

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