We report on the formation of low-resistance Ohmic contacts to N-face n-GaN for high-power vertical light-emitting diodes using an Al–Ga solid solution (50 nm)/Ti(30 nm)/Al(200 nm) scheme and compare them with Ti(30 nm)/Al(200 nm) contacts. The Al–Ga solid solution layer is introduced to minimize the formation of Ga vacancies near the N-face n-GaN surface. It is shown that, unlike the Ti/Al contacts, the Al–Ga solid solution/Ti/Al contacts exhibit Ohmic behavior with a resistivity of 4.1×10−4 Ω cm2, even after annealing at 250 °C. X-ray photoemission spectroscopy and secondary ion mass spectrometry examinations are performed to understand the temperature dependence of the electrical properties.

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