Ultrathin conformable artificial synapse platforms that can be used as on-body or wearable chips suggest a path to build next-generation, wearable, intelligent electronic systems that can mimic the synaptic operations of the human brain. So far, an artificial synapse architecture with ultimate mechanical flexibility in a freestanding form while maintaining its functionalities with high stability and accuracy on any conformable substrate has not been demonstrated yet. Here, we demonstrate the first ultrathin artificial synapse (∼500 nm total thickness) that features freestanding ferroelectric organic neuromorphic transistors (FONTs), which can stand alone without a substrate or an encapsulation layer. Our simple dry peel-off process allows integration of the freestanding FONTs with an extremely thin film that is transferable to various conformable substrates. The FONTs exhibit excellent and reliable synaptic functions, which can be modulated by diverse electrical stimuli and relative timing (or temporal order) between the pre- and postsynaptic spikes. Furthermore, the FONTs show sustainable synaptic plasticity even under folded condition (R = 50 μm, ε = 0.48%) for more than 6000 input spikes. Our study suggests that the ultrathin conformable organic artificial synapse platforms are considered as one of key technologies for realization of wearable intelligent electronics in the future.
The human brain intrinsically operates with a large number of synapses, more than 10 15. Therefore, one of the most critical requirements for constructing artificial neural networks (ANNs) is to achieve extremely dense synaptic array devices, for which the crossbar architecture containing an artificial synaptic node at each cross is indispensable. However, crossbar arrays suffer from the undesired leakage of signals through neighboring cells, which is a major challenge for implementing ANNs. In this work, we show that this challenge can be overcome by using Pt/TaO y / nanoporous (NP) TaO x /Ta memristor synapses because of their self-rectifying behavior, which is capable of suppressing unwanted leakage pathways. Moreover, our synaptic device exhibits high non-linearity (up to 10 4), low synapse coupling (S.C, up to 4.00 × 10 −5), acceptable endurance (5000 cycles at 85°C), sweeping (1000 sweeps), retention stability and acceptable cell uniformity. We also demonstrated essential synaptic functions, such as long-term potentiation (LTP), long-term depression (LTD), and spiking-timing-dependent plasticity (STDP), and simulated the recognition accuracy depending on the S.C for MNIST handwritten digit images. Based on the average S.C (1.60 × 10 −4) in the fabricated crossbar array, we confirmed that our memristive synapse was able to achieve an 89.08% recognition accuracy after only 15 training epochs.
The development of energy-efficient artificial synapses capable of manifoldly tuning synaptic activities can provide a significant breakthrough toward novel neuromorphic computing technology. Here, a new class of artificial synaptic architecture, a three-terminal device consisting of a vertically integrated monolithic tungsten oxide memristor, and a variable-barrier tungsten selenide/graphene Schottky diode, termed as a 'synaptic barrister,' are reported. The device can implement essential synaptic characteristics, such as short-term plasticity, long-term plasticity, and paired-pulse facilitation. Owing to the electrostatically controlled barrier height in the ultrathin van der Waals heterostructure, the device exhibits gate-controlled memristive switching characteristics with tunable programming voltages of 0.2-0.5 V. Notably, by electrostatic tuning with a gate terminal, it can additionally regulate the degree and tuning rate of the synaptic weight independent of the programming impulses from source and drain terminals. Such gate tunability cannot be accomplished by previously reported synaptic devices such as memristors and synaptic transistors only mimicking the two-neuronal-based synapse. These capabilities eventually enable the accelerated consolidation and conversion of synaptic plasticity, functionally analogous to the synapse with an additional neuromodulator in biological neural networks.
We theoretically propose a family of f -electron based magnets that realizes Kitaev-type bonddependent anisotropic interactions. Based on ab initio calculations, we show that A2PrO3 (A: alkali metals) crystalize in a triclinic structure with honeycomb layers of edge-sharing PrO6 octahedra. Each Pr 4+ cation has a 4f electron in the Γ7 doublet, which comprises a spin-orbital entangled Kramers pair with the effective moment J eff = 1/2. By using the Wannier orbitals from the ab initio calculations, we find that the effective interactions between the J eff = 1/2 moments are predominantly of antiferromagnetic Kitaev type for light alkali metals A=Li and Na, in stark contrast to the ferromagnetic ones in 4d-and 5d-electron based materials. Our finding would provide a playground for the Kitaev spin liquids that is hard to be accessed by the candidates ever discovered. arXiv:1807.01443v1 [cond-mat.str-el]
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