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This paper describes the growth of lead selenide (PbSe) thin films on glass and on ITO-covered glass substrates at room temperature under normal pressure utilising the successive ionic layer adsorption and reaction (SILAR) technique. Aqueous precursor solutions, lead acetate complexed with triethanolamine and sodium selenosulfate, were used for lead and selenide, respectively. The films were found to be metallic and adherent. The properties of the films were characterised by means of X-ray diffraction (XRD), Rutherford back-scattering spectrometry (RBS), nuclear reaction analysis (NRA) and scanning electron microscopy (SEM).

Selective-area atomic layer deposition (ALD) was achieved using microcontact printed RuO x films as an activation layer for ruthenium ALD process. Patterned RuO x films were prepared by transferring RuCl 3 layer by a PDMS (polydimethylsiloxane) stamp to Si(100) substrate and exposing this layer to ozone. Patterned films had either 1.5 μm or about 500 nm wide RuO x lines. Ruthenium was deposited on the activated areas at 250 °C. At this temperature the ruthenium did grow only on the activated areas but not on silicon so that the features of the stamps were repeated on the substrate.

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