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Thin networks of high aspect ratio conductive nanowires can combine high electrical conductivity with excellent optical transparency, which has led to a widespread use of nanowires in transparent electrodes, transistors, sensors, and flexible and stretchable conductors. Although the material and application aspects of conductive nanowire films have been thoroughly explored, there is still no model which can relate fundamental physical quantities, like wire resistance, contact resistance and nanowire density, to the sheet resistance of the film. Here we derive an analytical model for the electrical conduction within nanowire networks based on an analysis of the parallel resistor network.The model captures the transport characteristics and fits a wide range of experimental data, allowing for the determination of physical parameters and performance limiting factors, in sharp contrast to the commonly employed percolation theory. The model

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