Germanium self-assembled nanoislands and quantum dots are very prospective for CMOS-compatible optoelectronic integrated circuits but their photoluminescence (PL) intensity is still insufficient for many practical applications. Here, it is demonstrated experimentally that the PL of Ge nanoislands in silicon photonic crystal slabs (PCS) with hexagonal lattice can be dramatically enhanced due to the involvement in the emission process of the bounds states in the continuum. These high-Q photonic resonances allow to achieve PL resonant peaks with the quality factor as high as 2200 and with the peak PL enhancement factor of more than two orders of magnitude. The corresponding integrated PL enhancement is demonstrated to be more than one order of magnitude. This effect is studied theoretically by the Fourier modal method in the scattering matrix form. The symmetry of the quasi-normal guided modes in the PCS is described in terms of group theory. This work paves the way toward a new class of optoelectronic components compatible with silicon technology.

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Superlattices of Si3N4 and Si-rich silicon nitride thin layers with varying thickness were prepared by plasma enhanced chemical vapor deposition. After high temperature annealing, Si nanocrystals were formed in the former Si-rich nitride layers. The control of the Si quantum dots size via the SiNx layer thickness was confirmed by transmission electron microscopy. The size of the nanocrystals was well in agreement with the former thickness of the respective Si-rich silicon nitride layers. In addition X-ray diffraction evidenced that the Si quantum dots are crystalline whereas the Si3N4 matrix remains amorphous even after annealing at 1200 degrees C. Despite the proven Si nanocrystals formation with controlled sizes, the photoluminescence was 2 orders of magnitude weaker than for Si nanocrystals in SiO2 matrix. Also, a systematic peak shift was not found. The SiNx/Si3N4 superlattices showed photoluminescence peak positions in the range of 540-660nm (2.3-1.9 eV), thus quite similar to the bulk Si3N4 film having peak position at 577nm (2.15 eV). These rather weak shifts and scattering around the position observed for stoichiometric Si3N4 are not in agreement with quantum confinement theory. Therefore theoretical calculations coupled with the experimental results of different barrier thicknesses were performed. As a result the commonly observed photoluminescence red shift, which was previously often attributed to quantum-confinement effect for silicon nanocrystals, was well described by the interference effect of Si3N4 surrounding matrix luminescence

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Rigorous coupled-wave analysis (RCWA) is a very effective tool for the studying optical properties of multilayered vertically invariant periodic structures. However, it fails to deal with arrays of small particles because of high gradients in a local field. In this thesis, we implement discrete dipole approximation (DDA) for the construction of scattering matrices of arrays of resonant nanoparticles. This strongly speeds up the calculations and therefore provides an opportunity for thorough consideration of various layered structures with small periodic inclusions in terms of the RCWA. We study in detail three main stages of the method: calculation of polarizability tensor of a single nanoparticle, effective polarizability of this particle in a lattice and corresponding scattering matrix of the layer for further integration in the conventional RCWA approach. We demonstrate the performance of the proposed method by considering plasmonic lattices embedded in a homogeneous ambiance and placed inside and onto optical waveguides and compare our results with experimental papers. Such phenomena as localized surface plasmon resonances (LSPRs) and lattice plasmon resonances (LPRs) are observed as well as their hybridization with photonic guided modes. High accuracy and fast convergence of our approach are shown by a comparison with other computational approaches. Typical limits of applicability of our approximate method are determined by an exploration of the dependence of its error on the parameters of the structure. This paper is an extended version of our article [1].