The superfast (picosecond range) high-current switching observed recently in a GaAs junction bipolar transistor is explained by practically homogeneous carrier generation in the volume of the switching channels by a moving train of avalanching Gunn domains of large amplitude. The very fast (∼200ps) reduction in the collector voltage is determined by shrinkage of each domain, provided the negative electron mobility in ultrahigh electric fields is taken into account and current filamentation takes place. The results of one-dimensional simulations show good quantitative agreement with experimental voltage and current wave forms when the simulated switching area is equal to the summed areas of the filaments observed in the experiment.

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Broadband pulsed THz emission with peak power in the sub-mW range has been observed experimentally during avalanche switching in a gallium arsenide bipolar junction transistor at room temperature, while significantly higher total generated power is predicted in simulations. The emission is attributed to very fast oscillations in the conductivity current across the switching channels, which appear as a result of temporal evolution of the field domains generated in highly dense electron-hole plasma. This plasma is formed in turn by powerful impact ionization in multiple field domains of ultrahigh amplitude.