Downloaded From: http://opticalengineering.spiedigitallibrary.org/ on 05/16/2015 Terms of Use: http://spiedl.org/termsAbstract. We present an analytical model to analyze the influence of carrier dynamics on the static and dynamic responses of transistor laser (TL). Our analysis is based on solving the continuity equation and the rate equations which incorporate the virtual states as a conversion mechanism. We show that the details of the dc and small signal behavior of transistor lasers are strongly affected by the escape and capture times of carriers in quantum well (QW). Also, the effects of carrier recombination lifetime in the quantum well and base regions on the TL static and dynamic performances are investigated.

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An equivalent circuit model for the design and analysis of two-section gain lever quantum dot (QD) laser is presented. This model is based on the three level rate equations with two independent carrier populations and a single longitudinal optical mode. By using the presented model, the effect of gain lever on QD laser performances is investigated. The results of simulation show that the main characteristics of laser such as threshold current, transient response, output power and modulation response are affected by differential gain ratios between the two-sections.

We analyze the graphane p-n junction performance. The analysis method is based on solving Poisson and current equations by using the Green function method. The Green function method gives a simple and fast tool for solving the Poisson equation. Our analysis method is different compared to earlier reports about the analysis of the graphane p-n junction. By using the presented method, the electrical field, electrical potential, and carrier concentration in devices are calculated. Our results are in agreement with numerical and experimental results reported by other researchers. Due to taking into account the carrier concentration in the space charge region, the precision of our results is better than former ones.