Objective:The purpose of this study was to investigate the correlation between activity of daily living and social psychology and work mind of office workers with non-specific chronic neck pain (NSCNP). Design: Crossed-sectional study Methods: 86 patients with NSCNP were recruited for this study. Neck disability index (NDI) and Numerical pain rating scale (NPRS) were used to check the pain intensity and disability of patients with neck pain. To find out the occupational factors of the subjects, the Korean version of Latack Coping Scale was used. And,To find out the socio-psychological factors of the subjects, the Korean version of depression anxiety stress scale (DASS-21) was used. We performed correlation for each variable. Results: The correlation between NPRS and NDI and DASS-21 Scale were clear positive correlation (p＜0.05). There was no statistical significance between the LATACK control group and the pain and disability index (p＞0.05). A clear positive correlation was established between the avoidance group of LATACK and pain (p＜0.01). Conclusions: Through this study, it is necessary to have time to manage depression, anxiety, and stress in the treatment of neck pain in office workers who spend a lot of time sitting. In addition, it is thought that there should be the ability to control oneself about one's duties in the workplace.

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Recently, amorphous metal-oxide semiconductors (AOSs) such as indium gallium zinc oxide (IGZO) have attracted great attention with their lower power consumption and higher mobility than amorphous silicon in the display field. However, the threshold voltage (Vth) shift of IGZO thin film transistor (TFT) caused by their poor reliability leads to the drop panel luminance. Therefore, improvement of IGZO TFT reliability is necessary, which is largely influenced by oxygen vacancy and hydrogen. In particular, hydrogen has shown different roles inside the IGZO active layer by hydrogen concentration. At lower concentration, the hydrogen passivation of oxygen deficiency region induces the improvement of initial electrical characteristics and reliability [2]. Meanwhile, Vth shift and degradation reliability are generated at higher concentration owing to the hydrogen related defect states [3]. Therefore, controlling excess hydrogen is necessary for reliability enhancement. In this work, IGZO thin film was fabricated by cryopumping system instead of a turbo molecular pump (TMP) for radio frequency sputtering to reduce hydrogen concentration. Cryopump is an adsorption type that enables excellent evacuation ability of hydrogen and moisture taking up most of the partial pressure in high vacuum. As a result, deposition of IGZO thin film with lower hydrogen impurity is available. The hydrogen concentration in the IGZO thin film using both cryopump and TMP was quantitatively analyzed by elastic recoil detection (ERD) analysis. Then, electrical characteristics of the self-aligned top-gate structure TFTs fabricated by both pumps were measured with bias stress conditions. To sum up, we showed the improved reliability of IGZO TFT by controlling excess hydrogen using cryopumping system. Fig.1. (a) Schematic of RF magnetron sputtering process with cryopump. (b) TOF-SIMS depth profiles of hydrogen concentration in IGZO film using TMP and cryopump Acknowledgment This work was supported by the Korea Evaluation Institute of Industrial Technology(KEIT) grant funded by the Korea government (MOTIE) (No. 2021-11-1283) References Chung, Ui-Jin, et al. "15‐1: Invited Paper: Manufacturing Technology of LTPO TFT." SID Symposium Digest of Technical Papers. Vol. 51. No. 1. 2020. Hanyu, Yuichiro, et al. "Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors." Applied Physics Letters 103.20 (2013): 202114. Mativenga, Mallory, et al. "Origin of light instability in amorphous IGZO thin-film transistors and its suppression." Scientific reports 11.1 (2021): 1-12 Figure 1