Specific features of interimpurity interaction between group VI elements (S, Se) and fast diffusing impurities (Cr, Fe, Mn) in silicon are studied. On the basis of a comprehensive analysis of the results of investigations of electrical and photoelectric properties, IR absorption and ESR spectra, as well as of a neutron activation analysis, it is shown that in the bulk of silicon the group VI elements effectively interact with each of the fast diffusing impurities. For each group VI element–fast impurity pair in silicon there is a certain annealing temperature (Teff) at which they interact most efficiently. A definite correlation is established between Teff and the thermodynamic Gibbs energy (ΔG 2980) of the corresponding compounds. This correlation suggests that the interaction process in the bulk of silicon mainly involves formation of electrically neutral chemically bonded complexes by the substitutional group VI element centre and the interstitial fast diffusant centres.

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