The remarkable optoelectronic properties and considerable performance of the organo lead‐halide perovskites (PVKs) in various optoelectronic applications grasp tremendous scientific attention. However, the existence of the toxic lead in these compounds is threatening human health and remains a major concern in the way of their commercialization. To address this issue, numerous nontoxic alternatives have been reported. Among these alternatives, bismuth‐based PVKs have emerged as a promising substitute because of similar optoelectronic properties and extended environmental stability. This work communicates briefly about the possible lead‐alternatives and explores bismuth‐based perovskites comprehensively, in terms of their structures, optoelectronic properties, and applications. A brief description of lead‐toxification is provided and the possible Pb‐alternatives from the periodic table are scrutinized. Then, the classification and crystal structures of various Bi‐based perovskites are elaborated on. Detailed optoelectronic properties of Bi‐based perovskites are also described and their optoelectronic applications are abridged. The overall photovoltaic applications along with device characteristics (i.e., V OC , J SC , fill factor, FF, and power conversion efficiency, PCE), fabrication method, device architecture, and operational stability are also summarized. Finally, a conclusion is drawn where a brief outlook highlights the challenges that hamper the future progress of Bi‐based optoelectronic devices and suggestions for future directions are provided.

The use of ion-exchange techniques for doping silicate glasses with transition metals has attracted much attention in the last decades for its potential in several applications, namely, light waveguides technology, luminescent materials, and for the possibility to realize systems in which metal nanocluster formation is controlled by suitable post-exchange techniques. In this framework, the control of metal distribution inside the glass is a central issue for both the understanding of the incorporation process and for the definition of effective preparation protocols. In this experiment, metallic films (Ag, Cu, Au, Co) were deposited onto the substrates by the rf-sputtering technique. Metal ions then penetrate to substitute glass alkali by means of field-assisted ion-exchange, realized at different temperature and electric field values. In particular, we present in this paper the Au doping of silicate glasses, successfully realized for the first time with this method. The gold diffusion profiles, as measured by Secondary Ion Mass Spectrometry (SIMS), indicate that the migration depends on the experimental parameters (temperature and electric field), but also on the local structure, as well as on chemical phenomena occurring at the metal/glass interface.

No abstract

No abstract

No abstract