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Thin films of CdTe deposited by thermal evaporation at evaporation rate of 1000Å thickness on Si substrate.Deposited thin filmthickness is optimized with vacuum deposition conditions by comparing film thickness value from in-process quartz crystal(piezoelectric transducer) with stylus operated dektek surface profiler.CdTe film of thickness 1000 Åhasbeen deposited on silicon substrate by vacuum evaporation method. The thin films are characterized and properties of deposited film depend upon the deposition rate, geometrical position of substrate from the source and surface condition of the silicon substrate. X-ray diffraction (XRD) studyshows that CdTe films are polycrystalline with preferential orientation of (111) plane in cubic phase for 1, 5 10 Å/sec deposition rates.Energy dispersive X-ray analysis of CdTe films at 1, 5 10 Å/sec deposition rates after quantification gives Te/Cd ratio of 0.98, 1.14 and 1.18 respectively. Scanning electron microscopy (SEM)micrographs of CdTeat different magnifications show grain size in the range of 19-25, 21-28 17-20 nm for deposition rates of 1, 5 10 Å/sec respectively along the grain boundaries. SEM micrograph at deposition rate of 10 Å/sec has smaller size, smooth, void-free and uniformly distributed over the surface of substrate than the other deposition rates.

The present work represents the modeling of nano scale tin indium films by computing the film thickness, mass deposited on the substrate and mass transfer rate with time dependent model using BDF solver. Tin and indium is evaporated from a resistively heated evaporator source at a temperature of 1855 K and 1485 K respectively in a pressure (vacuum) of 100 Pa onto silicon surface held on a fixed surface. The film thickness varies between 144 nm to 164 nm for Tin and 164 nm to 183 nm for Indium across the sample after 60 sec of deposition, with radial symmetry about the midpoint of the source. The film thickness as well as mass deposited at a point increases linearly with time. Since the angular distribution is of particular interest in this model, by increasing the integration resolution to a maximum value for ensuring the most accurate angular resolution when computing the flux. The surface temperature is required to specifying the temperature of the evaporating tin and indium source using constant elements for turn off the refinement in the post-processing settings. The SEM micrographs of tin and indium at different magnifications shows the 100nm to 1microns grain size along the grain boundaries. Similarly, XRD analysis with Kα (wavelength 1.541874) shows the peaks of intensity at different 2θ angles for different orientations of planes with polycrystalline structure.

The surface temperature is required to specifying the temperature of the evaporating gold using constant elements for turn off the refinement in the post-processing settings. The paper represents the modeling of nano scale gold film by computing the film thickness, mass deposited on the substrate and mass transfer rate with time dependent model using BDF solver. Gold is evaporated from a resistively heated evaporator source at a temperature of 2000K onto a surface held on a fixed surface. The film thickness varies between 34nm to 39 nm across the sample after 60 sec of deposition, with radial symmetry about the midpoint of the source. The film thickness as well as mass deposited at a point increases linearly with time. Since the angular distribution is of particular interest in this model, by increasing the integration resolution to a maximum value for ensuring the most accurate angular resolution when computing the flux.