Reverse engineering (RE) is one of the major security threats to the semiconductor industry due to the involvement of untrustworthy parties in an increasingly globalized chip manufacturing supply chain. RE efforts have already been successful in extracting device level functionalities from an integrated circuit (IC) with very limited resources. Camouflaging is an obfuscation method that can thwart such RE. Existing work on IC camouflaging primarily involves transformable interconnects and/or covert gates where variation in doping and dummy contacts hide the circuit structure or build cells that look alike but have different functionalities. Emerging solutions, such as polymorphic gates based on a giant spin Hall effect and Si nanowire field effect transistors (FETs), are also promising but add significant area overhead and are successfully decamouflaged by the satisfiability solver (SAT)-based RE techniques. Here, we harness the properties of two-dimensional (2D) transition-metal dichalcogenides (TMDs) including MoS2, MoSe2, MoTe2, WS2, and WSe2 and their optically transparent transition-metal oxides (TMOs) to demonstrate area efficient camouflaging solutions that are resilient to SAT attack and automatic test pattern generation attacks. We show that resistors with resistance values differing by 5 orders of magnitude, diodes with variable turn-on voltages and reverse saturation currents, and FETs with adjustable conduction type, threshold voltages, and switching characteristics can be optically camouflaged to look exactly similar by engineering TMO/TMD heterostructures, allowing hardware obfuscation of both digital and analog circuits. Since this 2D heterostructure devices family is intrinsically camouflaged, NAND/NOR/AND/OR gates in the circuit can be obfuscated with significantly less area overhead, allowing 100% logic obfuscation compared to only 5% for complementary metal oxide semiconductor (CMOS)-based camouflaging. Finally, we demonstrate that the largest benchmarking circuit from ISCAS’85, comprised of more than 4000 logic gates when obfuscated with the CMOS-based technique, is successfully decamouflaged by SAT attack in <40 min; whereas, it renders to be invulnerable even in more than 10 h when camouflaged with 2D heterostructure devices, thereby corroborating our hypothesis of high resilience against RE. Our approach of connecting material properties to innovative devices to secure circuits can be considered as a one of a kind demonstration, highlighting the benefits of cross-layer optimization.

With an ever-increasing globalization of the semiconductor chip manufacturing supply chain coupled with soaring complexity of modern-day integrated circuits (ICs), intellectual property (IP) piracy, reverse engineering, counterfeiting, and hardware trojan insertion have emerged as severe threats that have compromised the security of critical hardware components. Logic locking (LL) is an IP protection technique that can mitigate these threats by locking a given IC with a secret key. Earlier LL demonstrations based on traditional silicon complementary metal-oxide-semiconductor (CMOS) technology and emerging memristors require significant hardware investment in the form of additional input gates and extensive CMOS peripherals, rendering them area- and energy-inefficient. In this article, we demonstrate multiple two-dimensional (2D) nanoscale memtransistor-based programmable logic gates such as AND, NAND, OR, XOR, and NOT gates, each of which can be locked/unlocked without requiring peripherals and at minuscule energy expenditure (<1 pJ). We also show that SAT-solver is unsuccessful in breaking into any of the ISCAS’85 benchmark circuits that utilize our LL scheme. The massive resilience to SAT-attack is attributed to the prowess of programmable 2D memtransistors which enable device-level LL of all the gates in each of the benchmark circuits. Given that 2D transistors are drawing increasing attention of chip manufacturing corporations like Intel, TSMC, etc., to replace and/or augment silicon at aggressively scaled technology nodes, our demonstration of area- and energy-efficient LL can be considered as a step toward the realization of secure ICs enabled by 2D nanoscale memtransistors.

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The advent of data-driven real-time applications requires the implementation of Deep Neural Networks (DNNs) on Machine Learning accelerators. Google's Tensor Processing Unit (TPU) is one such neural network accelerator that uses systolic array-based matrix multiplication hardware for computation in its crux. Manufacturing faults at any state element of the matrix multiplication unit can cause unexpected errors in these inference networks. In this paper, we propose a formal model of permanent faults and their propagation in a TPU using the Discrete-Time Markov Chain (DTMC) formalism. The proposed model is analyzed using the probabilistic model checking technique to reason about the likelihood of faulty outputs. The obtained quantitative results show that the classification accuracy is sensitive to the type of permanent faults as well as their location, bit position and the number of layers in the neural network. The conclusions from our theoretical model have been validated using experiments on a digit recognition-based DNN.

Artificial intelligence (AI) and Machine Learning (ML) are becoming pervasive in today's applications, such as autonomous vehicles, healthcare, aerospace, cybersecurity, and many critical applications. Ensuring the reliability and robustness of the underlying AI/ML hardware becomes our paramount importance. In this paper, we explore and evaluate the reliability of different AI/ML hardware. The first section outlines the reliability issues in a commercial systolic array-based ML accelerator in the presence of faults engendering from devicelevel non-idealities in the DRAM. Next, we quantified the impact of circuit-level faults in the MSB and LSB logic cones of the Multiply and Accumulate (MAC) block of the AI accelerator on the AI/ML accuracy. Finally, we present two key reliability issues -circuit aging and endurance in emerging neuromorphic hardware platforms and present our system-level approach to mitigate them.