Recently, much attention has been received by ion beam assisted deposition (IBAD) technology for the preparation of second-generation high temperature coated conductors. Surface roughness (Ra) for substrate material fabricated via IBAD route is required as less than 2 nm (5 μm×5 μm). The aim of this current study is to reduce Ra as less than 2 nm, which is 20 nm for original tapes. Solution deposition planarization (SDP) technique was utilized in order to further improve the surface quality of polished Hastelloy C-276 alloy, for which maximum Ra value is usually greater than 5nm. The processing parameters and precursors, influencing Ra, crystallinity, morphology and film thickness were systematically investigated. Precursor solutions with different concentration were prepared by utilizing yttrium acetate as solute, ethanol as solvent, di-ethanolamine and ethylene triamine as additives. The average Ra<2 nm and maximum Ra (max) <5 nm (5 μm×5 μm) was obtained after the heat treatment at 530°C. The obtained results suggested SDP technique as an effective way to resolve the problem of surface roughness.

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