Two-dimensional (2D) atomic crystals and their hybrid structures have recently attracted much attention due to their potential applications. The fabrication of metallic contacts or nanostructures on 2D materials is very common and generally achieved by performing electron-beam (e-beam) lithography. However, e-beam lithography is not applicable in certain situations, e.g., cases in which the e-beam resist does not adhere to the substrates or the intrinsic properties of the 2D materials are greatly altered and degraded. Here, we present a residue-free approach for fabricating high-performance graphene devices by patterning a thin film of e-beam resist as a stencil mask. This technique can be generally applied to substrates with varying surface conditions, while causing negligible residues on graphene. The technique also preserves the design flexibility offered by e-beam lithography and therefore allows us to fabricate multi-probe metallic contacts. The graphene field-effect transistors fabricated by this method exhibit smooth surfaces, high mobility, and distinct magnetotransport properties, confirming the advantages and versatility of the presented residue-free technique for the fabrication of devices composed of 2D materials.
We report semiconducting behavior of monolayer graphene enabled through plasma activation of substrate surfaces. The graphene devices are fabricated by mechanical exfoliation onto preprocessed SiO2/Si substrates. Contrary to pristine graphene, these graphene samples exhibit a transport gap as well as nonlinear transfer characteristics, a large on/off ratio of 600 at cryogenic temperatures, and an insulating-like temperature dependence. Raman spectroscopic characterization shows evidence of sp 3 hybridization of C atoms in the samples of graphene on activated SiO2/Si substrates. We analyze the hopping transport at low temperatures, and weak localization observed from magnetotransport measurements, suggesting a correlation between carrier localization and the sp 3 -type defects in the functionalized graphene. The present study demonstrates the functionalization of graphene using a novel substrate surface-activation method for future graphene-based applications.
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