We experimentally demonstrate the operation of a Josephson magnetic random access memory unit cell, built with a Ni80Fe20/Cu/Ni pseudo spin-valve Josephson junction with Nb electrodes and an integrated readout SQUID in a fully planarized Nb fabrication process. We show that the parallel and anti-parallel memory states of the spin-valve can be mapped onto a junction equilibrium phase of either zero or π by appropriate choice of the ferromagnet thicknesses, and that the magnetic Josephson junction can be written to either a zero-junction or π-junction state by application of write fields of approximately 5 mT. This work represents a first step towards a scalable, dense, and power-efficient cryogenic memory for superconducting high-performance digital computing.

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