No abstract

Efficient charge to spin conversion is important for low power spin logic devices. Spin and charge interconversion is commonly performed using heavy metals and topological insulators, while the field of oxides is not yet fully explored. Strontium iridate thin films were grown, where the different crystal structures form a perfect playground to understand the key factors in obtaining high charge to spin conversion efficiency (i.e., large spin Hall angle). It was found that the semiconducting Sr2IrO4 has a spin Hall angle of ~0.1 (depending on measurement technique), which is promising for a spin-orbit coupled electronic system and comparable to Pt. In contrast, the perovskite SrIrO3, reported to have a Dirac cone near the Fermi level, has a larger spin Hall angle of 0.3-0.4 degrees. The largest difference between the two materials is a large degree of spin-momentum locking in SrIrO3, comparable to known topological insulators. A simple semi-classical relationship is found where the spin Hall angle increases for higher degrees of spin-momentum locking and it also increases for lower Fermi wave vectors. This relationship is then able to explain the decreased spin Hall angle below 10 nm film thickness in SrIrO3, by relating it to the correspondingly higher carrier concentration (related to the higher Fermi wave vector). Breaking the commonly believed anti-correlation between resistivity and carrier concentration paves a pathway to lower power losses due to resistance while keeping large spin Hall angles.

Spin–orbit torques (SOTs) that arise from materials with large spin–orbit coupling offer a new pathway for energy‐efficient and fast magnetic information storage. SOTs in conventional heavy metals and topological insulators are explored extensively, while 5d transition metal oxides, which also host ions with strong spin–orbit coupling, are a relatively new territory in the field of spintronics. An all‐oxide, SrTiO3 (STO)//La0.7Sr0.3MnO3 (LSMO)/SrIrO3 (SIO) heterostructure with lattice‐matched crystal structure is synthesized, exhibiting an epitaxial and atomically sharp interface between the ferromagnetic LSMO and the high spin–orbit‐coupled metal SIO. Spin‐torque ferromagnetic resonance (ST‐FMR) is used to probe the effective magnetization and the SOT efficiency in LSMO/SIO heterostructures grown on STO substrates. Remarkably, epitaxial LSMO/SIO exhibits a large SOT efficiency, ξ|| = 1, while retaining a reasonably low shunting factor and increasing the effective magnetization of LSMO by ≈50%. The findings highlight the significance of epitaxy as a powerful tool to achieve a high SOT efficiency, explore the rich physics at the epitaxial interface, and open up a new pathway for designing next‐generation energy‐efficient spintronic devices.

It is experimentally established that charge current flowing in a channel with spin-momentum locking such as topological insulator surface states or Rashba interfaces induces a spin voltage, which can be electrically measured with a ferromagnetic contact along the current path. Using this fact in conjunction with Onsager reciprocity arguments, we make the surprising prediction that the anti-parallel resistance of a spin valve can be either larger or smaller than the parallel resistance depending on the direction of spin flow relative to the direction of spin-momentum locking. However, we argue that this remarkable signature of spin-momentum locking can only be observed in multi-terminal measurements. Two-terminal measurements in the linear response regime, will show a single anti-parallel resistance larger than the parallel resistance as commonly observed in channels without spin-orbit coupling. We support this result with detailed numerical calculations based on a semiclassical model that provides insight into the underlying physics.