Vertically aligned p-type silicon nanowire (SiNW) arrays were fabricated through metal-assisted chemical etching (MACE) of Si wafers. An indium tin oxide/indium zinc oxide/silicon nanowire (ITO/IZO/SiNW) heterojunction diode was formed by depositing ITO and IZO thin films on the vertically aligned SiNW arrays. The structural and electrical properties of the resulting ITO/IZO/SiNW heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and current−voltage (I−V) measurements. Nonlinear and rectifying I−V properties confirmed that a heterojunction diode was successfully formed in the ITO/IZO/SiNW structure. The diode had a well-defined rectifying behavior, with a rectification ratio of 550.7 at 3 V and a turn-on voltage of 2.53 V under dark conditions.

The objective of this study is the construction of a high power measurement system with NF HS4012 using LabVIEW as the platform of the measurement system for high power transducer. The purpose is to explore high power ultrasound applied to welding and study the size of the ultrasound transducer including its characteristic, energy production and the methods to control energy. The stability and efficiency of the characteristics of the original components and the circuitry of the entire activation system are key points of the investigation for this study.Keywords LabVIEW Á High power transducer Á Ultrasound transducer IntroductionLaboratory Virtual Instrument Engineering Workbench (LabVIEW) is a graphical programming environment. It can be used for sophisticated measurement and test for high power electrical energy by using intuitive graphical icons program connected to external high power instruments. A 550 W high power electrical energy is generated through a high power converter to drive the ultrasound transducer whose mechanical vibration is applied to vehicle leather by high speed mechanical vibrations [1].

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