Articles you may be interested inTemperature-dependent characteristics of an InP/InGaAs double heterojunction bipolar transistor with a stepgraded InAlGaAs collector Effect of composite collector design on the breakdown behavior of InGaP/GaAs double heterojunction bipolar transistorThe temperature-dependent dc characteristics of an interesting heterojunction bipolar transistor with an InGaAsP spacer and an InGaAs/ InGaAsP composite-collector structure are studied and demonstrated. By employing the intermediate band-gap In 0.72 Ga 0.28 As 0.61 P 0.39 material at the emitter-base and base-collector heterojunction, the electron blocking effect is effectively eliminated. The studied device gives the promising dc performances including the small offset and saturation voltages without degrading the breakdown behaviors. The typical incremental current gain of 114 and the maximum dc current gain of 118 are obtained. It is worthwhile to note that the desired current amplification over 11 decades of the magnitude of collector current I C is obtained in the studied device. Moreover, the switching or hysteresis phenomenon usually observed in InP-based devices is not seen in the studied device.

We have investigated the interesting double ion implant (DII) Ti-salicide and pre-amorphization implant (PAI) Co-salicide techniques for ultra-large-scale integration (ULSI) applications. The DII technique is combined with germanium (or arsenic) PAI and Si ion-mixing processes. The sheet resistances both of n + and p + polysilicons are decreased when the DII Ti-salicide and PAI Co-salicide techniques are used. Moreover, the incomplete phase transformation of Ti-salicide is not observed in 0.2 µm wide polysilicon devices with the Ge DII process. Furthermore, the n + /p-well junction leakage current is reduced when the Si ion-mixing process is used. Experimentally, based on the studied DII Ti-salicide and PAI Co-salicide techniques, high-performance 0.2 µm CMOS devices have been successfully fabricated.