 Users may download and print one copy of any publication from the public portal for the purpose of private study or research.  You may not further distribute the material or use it for any profit-making activity or commercial gain  You may freely distribute the URL identifying the publication in the public portal If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim.

No abstract

No abstract

Memristor devices that exhibit high integration density, fast speed, and low power consumption are candidates for neuromorphic devices. Here, we demonstrate a filament-based memristor using p-type SnS as the resistive switching material, exhibiting superlative metrics such as a switching voltage ∼0.2 V, a switching speed faster than 1.5 ns, high endurance switching cycles, and an ultralarge on/off ratio of 10 8 . The device exhibits a power consumption as low as ∼100 fJ per switch. Chip-level simulations of the memristor based on 32 × 32 high-density crossbar arrays with 50 nm feature size reveal on-chip learning accuracy of 87.76% (close to the ideal software accuracy 90%) for CIFAR-10 image classifications. The ultrafast and low energy switching of p-type SnS compared to n-type transition metal dichalcogenides is attributed to the presence of cation vacancies and van der Waals gap that lower the activation barrier for Ag ion migration.

This paper reports a recent development of a narrowband high-temperature superconducting (HTS) bandpass filter with a fractional bandwidth of 0.35% in the L band. The filter exhibits a 10-pole quasi-elliptic function response implemented with a cascaded quadruplet coupling structure. The measured filter shows a midband insertion loss of 0.26 dB and a return loss better than −15 dB over the passband. Steep rejection slopes are obtained at the band edges and the measured skirt slope has exceeded 120 dB MHz −1 , resulting in an excellent out-of-band rejection very close to the band-edge. Combining this filter together with a special designed low-noise amplifier (LNA) as well as a cryo-cooler, an HTS subsystem was then constructed and mounted in the front end of a wind-profiler radar system, substituting the corresponding conventional parts. A field trial has shown that the HTS filter could markedly improve the sensitivity as well as the anti-interference capability of a wind-profiler radar system.