AbstractPorous material (PM) shows good sound absorption performance, however, the sound absorbing property of PM with different parameters are greatly different. In order to match the most suitable absorbing materials with the most satisfactory sound-absorbing performance according to the noise spectrum in different practical applications, multi-population genetic algorithm is used in this paper to optimize the parameters of porous sound absorbing structures that are commonly used according to the actual demand of noise reduction and experimental verification. The results shows that the optimization results of multi-population genetic algorithm are obviously better than the standard genetic algorithm in terms of sound absorption performance and sound absorption bandwidth. The average acoustic absorption coefficient of PM can reach above 0.6 in the range of medium frequency, and over 0.8 in the range of high frequency through optimization design. At a mid-to-high frequency environment, the PM has a better sound absorption effect and a wider frequency band than that of micro-perforated plate. However, it has a poor sound absorption effect at low frequency. So it is necessary to select suitable sound absorption material according to the actual noise spectrum.

The ultra-wide bandgap semiconductor AlN has attracted a great deal of attention owing to its wide application potential in the field of electronics and optoelectronic devices. In this report, based on the mechanism of the physical vapor transport (PVT) growth of AlN crystal, the c- and m-plane AlN seed crystals were prepared simultaneously through special temperature field design. It is proved that AlN crystals with different orientations can be obtained at the same temperature field. The structure parameter of AlN crystal was obtained through the characteristic evaluations. In detail, XPS was used to analyze the chemical states and bonding states of the surface of seed crystals. The content of oxygen varied along with distinct orientations. Raman spectrum documented a small level of compressive stress on these crystal seeds. Tested results confirmed that the prepared AlN crystal seeds had high quality.