Colorectal cancer is a heterogeneous disease. Although many risk factors are used to predict colorectal cancer patients’ prognosis after surgical resection, new prognostic factors are still needed to be defined to promote predictive efficacy of prognosis and further guide therapies. Herein, we identified the prognostic significance of CXCR2 in colorectal cancer patients. We retrospectively analysed 134 patients with colorectal cancer who underwent minimally invasive surgery between 2010 and 2011. The overall cohort was divided into a training set (n = 78) and a validation set (n = 56). We detected CXCR2 expression using immunohistochemical staining and defined the cut-off value using X-tile program. Next, we analysed the association between CXCR2 expression and clinicopathologic features in training and validation sets. High expression of CXCR2 was associated with Dukes stage (P = 0.018), tumor invasion (P = 0.018) and liver metastasis (P = 0.047). Multivariate COX regression analyses confirmed that high CXCR2 level was an independent prognostic risk factor for both overall survival and disease free survival. Kaplan-Meier survival analysis demonstrated that patients with high expression of CXCR2 had a poor overall survival and disease free survival even in low-risk group (I + II). This indicated that CXCR2 can help to refine individual risk stratification. In addition, we established Nomograms of all significant factors to predict 3- or 5-years overall survival and disease free survival. Moreover, we found the combination of CXCR2 and its ligand CXCL5 had more significant value in predicting the prognosis than single CXCR2 factor.

In this work, ZnO has been investigated as a substrate technology for GaN-based devices due to its close lattice match, stacking order match, and similar thermal expansion coefficient. Since MOCVD is the dominant growth technology for GaN-based materials and devices, there is a need to more fully explore this technique for ZnO substrates. Our aim is to grow low defect density GaN for efficient phosphor free white emitters. However, there are a number of issues that need to be addressed for the MOCVD growth of GaN on ZnO. The thermal stability of the ZnO substrate, out-diffusion of Zn from the ZnO into the GaN, and H 2 back etching into the substrate can cause growth of poor quality GaN. Cracks and pinholes were seen in the epilayers, leading to the epi-layer peeling off in some instances. These issues were addressed by the use of H 2 free growth and multiple buffer layers to remove the cracking and reduce the pinholes allowing for a high quality GaN growth on ZnO substrate.

No abstract

No abstract

No abstract