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We fabricated an ultra-compact InP-based DP-QPSK modulator by the hybrid integration of an InP twin-IQ modulator and a PLC polarization multiplexing circuit for the first time. 112-Gb/s DP-QPSK modulation is successfully demonstrated.

A new isolation technology, called PBR LOCOS (Poly Buffer Recessed LOCOS) process, has been developed for a 256Mbit DRAM with 0.72 pm2 cell. The features of the PBR LOCOS process are low bird's beak encroachment and defects free isolation, which are achieved by using shallow recess etching, buffer polysilicon, and silicon nitride sidewall. It is formed that the shallow recess etching provides high punch-through voltage of parasitic field transistors.The PBR LOCOS process allows the fabrication of 256Mbit DRAM cells.