Evolution of growth/dissolution conductive filaments (CFs) in oxide-electrolyte-based resistive switching memories are studied by in situ transmission electron microscopy. Contrary to what is commonly believed, CFs are found to start growing from the anode (Ag or Cu) rather than having to reach the cathode (Pt) and grow backwards. A new mechanism based on local redox reactions inside the oxide-electrolyte is proposed.

Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for the fabrication of electronic devices, with electronic nonvolatile memories being those that have received the most attention. The presence and quality of the RS phenomenon in a materials system can be studied using different prototype cells, performing different experiments, displaying different figures of merit, and developing different computational analyses. Therefore, the real usefulness and impact of the findings presented in each study for the RS technology will be also different. This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained. The idea is to help the scientific community to evaluate the real usefulness and impact of an RS study for the development of RS technology.

Resistive memory (ReRAM) based on a solid-electrolyte insulator is a promising nanoscale device and has great potentials in nonvolatile memory, analog circuits, and neuromorphic applications. The underlying resistive switching (RS) mechanism of ReRAM is suggested to be the formation and rupture of nanoscale conductive filament (CF) inside the solid-electrolyte layer. However, the random nature of the nucleation and growth of the CF makes their formation difficult to control, which is a major obstacle for ReRAM performance improvement. Here, we report a novel approach to resolve this challenge by adopting a metal nanocrystal (NC) covered bottom electrode (BE) to replace the conventional ReRAM BE. As a demonstration vehicle, a Ag/ZrO(2)/Cu NC/Pt structure is prepared and the Cu NC covered Pt BE can control CF nucleation and growth to provide superior uniformity of RS properties. The controllable growth of nanoscale CF bridges between Cu NC and Ag top electrode has been vividly observed by transmission electron microscopy (TEM). On the basis of energy-dispersive X-ray spectroscopy (EDS) and elemental mapping analyses, we further confirm that the chemical contents of the CF are mainly Ag atoms. These testing/metrology results are consistent with the simulation results of electric-field distribution, showing that the electric field will enhance and concentrate on the NC sites and control location and orientation of Ag CFs.