A new silicon-on-insulator metal-oxide-semiconductor field effect transistor (SOI MOSFET) structure utilizing a novel body potential control scheme is proposed and studied by simulation. In the 'ON' state its body potential is electrically isolated from the external body terminal by a gate depletion layer, and is controlled automatically through its drain current and drain voltage. More than 30% improvement in its current drivability over bulk counterparts is predicted. Mixed-mode simulation shows that a complementary MOS (CMOS) inverter composed of the proposed devices has a much shorter propagation delay than that in the case of a bulk CMOS inverter. Simulation results also reveal that there is no history effect in its propagation delay whereas a strong history effect exists in conventional floating-body counterparts. This is because the proposed device in the 'OFF' state is functionally equivalent to a body-tied partially-depleted SOI MOSFET, allowing excess majority carriers, which are the main cause of the 'history effect', to be swept away from the body terminal every time it goes to the 'OFF' state.

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