Applying triboelectric nanogenerators (TENGs) in air filtration systems to generate electric charges through friction is a major advancement in air cleaning technology. The performance of triboelectric air filter strongly depends on the properties of triboelectric materials. In this work, a better triboelectric material, polyvinylidene fluoride (PVDF)/UiO‐66 composite nanofiber membrane (P6‐NFM), is designed and fabricated through electrospinning technology by doping UiO‐66 into PVDF matrix. As the weight ratio of UiO‐66 increases to 1%, PVDF/UiO‐66 composite nanofiber‐based TENG (P6‐TENG) achieves the maximum current, voltage, and triboelectric charge of 4.29 µA, 52.8 V, and 22.02 nC, which are 6.5 times, 5.1 times, and 8.0 times as large as those of pure PVDF‐based TENG (P‐TENG). Therefore, the triboelectric air filter based on P6‐NFM can be easily charged by slapping the fiber membrane and spun‐bond fabric. After charging, the removal efficiency of P6‐NFM is 92% for PM0.5 and 98% for PM2.5, which are 2.8 and 1.2 times those of the uncharged one. More importantly, the filtration efficiency of this air filter keeps stable after the membrane is washed four times. This method of loading UiO‐66 on the triboelectric fiber material shows tremendous potential in self‐charging and reusable air purification applications.

Rare earth (RE) element-doped two-dimensional (2D) transition metal dichalcogenides (TMDCs) with applications in luminescence and magnetics have received considerable attention in recent years. To date, the effect of RE element doping on the electronic properties of monolayer 2D-TMDCs remains unanswered due to challenges including the difficulty of achieving valid monolayer doping and introducing RE elements with distinct valence and atomic configurations. Herein, we report a unique strategy to grow the Sm-doped monolayer MoS2 film by using an atmospheric pressure chemical vapor deposition method with the substrate face down on top of the growth source. A stable monolayer triangular Sm-doped MoS2 was achieved. The threshold voltage of an Sm-doped MoS2-based field effect transistor (FET) moved from −12 to 0 V due to the p-type character impurity state introduced by Sm ions in monolayer MoS2. Additionally, the electrical performance of the monolayer MoS2-based FET was improved by RE element Sm doping, including a 500% increase of the on/off current ratio and a 40% increase of the FET’s mobility. The electronic property enhancement resulted from Sm doping MoS2, which led internal lattice strain and changes in Fermi energy levels. These findings provide a general approach to synthesize RE element-doped monolayer 2D-TMDCs and to enrich their applications in electrical devices.