Photodetectors formed with layered two‐dimensional (2D) materials have shown significant potential for integration with photonic circuits, offering fast, high responsivity and low noise detection over a broad range of optical wavelengths. However, only preliminary trials of this concept have been performed on emerging photonics platforms such as lithium niobate on insulator (LNOI). In this study, a novel architecture consisting of ≈15 nm thick layered black phosphorus (bP) photoconductors draped over LNOI waveguides is demonstrated. The performance of these detectors is studied across the telecom bands at room temperature, and a high extrinsic responsivity of 148 mA W−1 is measured at λ = 1550 nm under low bias conditions (VDS = 0.3 V). The spectral response of the detectors is broad allowing the response of other photonic components, such as fiber‐to‐chip grating couplers, to be characterized in situ, without need to out‐couple the light. Finally, the speed of the bP detectors is found to be beyond our instrumentation, setting 100 ns as an upper‐limit rise/fall time, with the actual speed of the bP detector likely to be much faster.

A single photodetector capable of switching its peak spectral photoresponse between two wavelength bands is highly useful, particularly for the infrared (IR) bands in applications such as remote sensing, object identification, and chemical sensing. Technologies exist for achieving dual-band IR detection with bulk III−V and II−VI materials, but the high cost and complexity as well as the necessity for active cooling associated with some of these technologies preclude their widespread adoption. In this study, we leverage the advantages of low-dimensional materials to demonstrate a bias-selectable dual-band IR detector that operates at room temperature by using lead sulfide colloidal quantum dots and black phosphorus nanosheets. By switching between zero and forward bias, these detectors switch peak photosensitive ranges between the mid-and short-wave IR bands with room temperature detectivities of 5 × 10 9 and 1.6 × 10 11 cm Hz 1/2 W −1 , respectively. To the best of our knowledge, these are the highest reported room temperature values for low-dimensional material dual-band IR detectors to date. Unlike conventional bias-selectable detectors, which utilize a set of back-to-back photodiodes, we demonstrate that under zero/forward bias conditions the device's operation mode instead changes between a photodiode and a phototransistor, allowing additional functionalities that the conventional structure cannot provide.

Flexible optoelectronics is a rapidly growing field, with a wide range of potential applications. From wearable sensors to bendable solar cells, curved displays, and curved focal plane arrays, the possibilities are endless. The criticality of flexible photodetectors for many of these applications is acknowledged, however, devices that are demonstrated thus far are limited in their spectral range. In this study, flexible photodetectors are demonstrated using a VOx nanoparticle ink, with an extremely broad operating wavelength range of 0.4 to 20 µm. This ink is synthesized using a simple and scalable wet‐chemical process. These photodetectors operate at room temperature and exhibit minimal variance in performance even when bent at angles of up to 100 ° at a bend radius of 6.4 mm. In addition, rigorous strain testing of 100 bend and release cycles revealed a photoresponse with a standard deviation of only 0.55%. This combination of mechanical flexibility, wide spectral response, and ease of fabrication makes these devices highly desirable for a wide range of applications, including low‐cost wearable sensors and hyperspectral imaging systems.