We have developed organic [poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)]–inorganic [ZnSSe] hybrid structure ultraviolet avalanche photodiodes (UV-APDs) with a long device lifetime and integrated APD arrays. The active layer is ZnSSe grown by molecular beam epitaxy (MBE) and the window p*-type layer is PEDOT:PSS formed by the inkjet method. The device exhibits a lifetime of more than 100 d and an APD operation of more than 500 times. We integrated 3-element APD array separated only by a window spot of PEDOT:PSS. The present array device in the APD operation shows no detectable photosignal cross-talk between the neighboring APDs.

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Recently, we have developed organic (PEDOT:PSS)–inorganic (ZnSSe) hybrid avalanche photodiode (APD) with long life time and its array. In this article, we review the development of the organic–inorganic hybrid‐type ZnSe‐based UV‐APDs array. We used PEDOT:PSS as UV transparent hole‐transport conducting polymer window layers formed by inkjet printing technique. We have successfully fabricated low dark current ultraviolet hybrid APDs. The hybrid APD device has exhibited very low voltage APD operation at 29 V and extremely low dark current of 10‐11 A/mm2 in the avalanche breakdownregion. The hybrid APD also has shown maximum multiplication factor of 45 and high sensitivity ∼ 3 A/W at the ultraviolet region (∼ 300 nm). A stable device operation is established using polyimide passivation and sealed package with N2 atmosphere. We also demonstrated integrated devices operation in APD mode with very small photosignal cross‐talk of ‐50 dB. The tail of current‐profile was determined as 8 μm by using in‐plane electron‐beam induced current (EBIC) measurement. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)