This paper compares the electrical characteristics of MOSFETs and tunnel FETs at different temperatures (300 ~ 10 K) by advance Sentaurus TCAD simulations at low temperature. we deliberated output characteristics of short-channel MOSFETs based on temperature. Our massiveness indicated that MOSFETs with drift-diffusion transport mechanism exhibit higher on-currents, and the subthreshold swing first decreases with temperatures linearly and then saturates at cryogenic temperatures due to source-to-drain tunneling. Also the output current is more when device cryogenically shift from 300K to 10K, However, our simulations reveal that the subthreshold swing of a tunnel FET is almost independent on temperatures. This wok also points out the challenges of a tunnel FET working at cryogenic temperatures.