In this paper, electrostatic discharge (ESD) protection circuits with an advanced substrate‐triggered NMOS and a gate‐substrate‐triggered NMOS are proposed to provide low trigger voltage, low leakage current, and fast turn‐on speed. The proposed ESD protection devices are designed using 0.13 μm CMOS technology. The experimental results show that the proposed substrate‐triggered NMOS using a bipolar transistor has a low trigger voltage of 5.98 V and a fast turn‐on time of 37 ns. The proposed gate‐substrate‐triggered NMOS has a lower trigger voltage of 5.35 V and low leakage current of 80 pA.

Abstract-This paper proposes a method to reduce flicker when running an AC-power direct-drive type multiple string LED driver IC. The proposed method greatly decreases flicker using one capacitor and Ptype MOSFET transistor (PMOS). The flicker index (FI) was reduced by over 40% through experiments, and less than half of the conventional external components are used in the passive valley fill circuit, which gives an advantage in the cost and utilization in the design of LED lighting modules. The 0.35 um 700 V BCD process was used to manufacture this LED driver.